Blanka Magyari-Köpe

Senior Research Engineer

Stanford Nanodevices Group
Stanford University
Paul G. Allen 105
420 Via Palou Mall, Stanford, CA 94305
  650-725-5725
Fax 650-725-0991

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 		Blanka Magyari-Köpe
   
 

Publication List

  1. Book chapter in Future Intelligent Integrated Systems of the Handbook of Intelligent Nanosystems Series, “Resistive Memories “,
    B. Magyari-Köpe and Y. Nishi, 2012, in press.

  2. First principles modeling of charged oxygen vacancy filaments in reduced TiO2 implications to the operation of non-volatile memory devices,
    L. Zhao, S.-G. Park, B. Magyari-Köpe and Y. Nishi, 2012,
    Math. and Comp. Model., 10.1016/j.mcm.2012.11.009, 2012.

  3. Charge trapping mechanism in oxygen vacancy filaments in reduced TiO2,
    L. Zhao, B. Magyari-Köpe and Y. Nishi, to be submitted.

  4. First principles investigations of the metal doping effects in the filamentary resistive switching of TiO2,
    L. Zhao, S.-G. Park, B. Magyari-Köpe and Y. Nishi, to be submitted.

  5. Generalized theory of the ON-OFF switching mechanism of binary-oxide-based resistive random access memories,
    K. Kamiya, M. Yang, T. Nagata, S. G. Park, B. Magyari-Köpe, T. Chikyow, K. Yamada, M. Niwa, Y. Nishi, and K. Shiraishi, 2012, submitted.

  6. First Principles Guiding Principles for the Switching Process in Oxide ReRAM,
    K. Shiraishi, M.Y. Yang, K. Kamiya, B. Magyari-Köpe, Masaaki Niwa, and Yoshio Nishi,
    Proc. IEEE Int. Conf. on Solid-State and Integr. Circuit Techn. (ICSICT), 2012.

  7. Band Structure and Ballistic Electron Transport Simulations in GeSn Alloys,
    S. Gupta, B. Magyari-Köpe,Y. Nishi and K. Saraswat,
    Proc. Int. Conf. Simul. Semic. Proc. Dev. (SISPAD), 2012

  8. Computational study toward micro electronics engineering,
    K. Shiraishi, K. Yamaguchi, M. Yang, S. G. Park, K. Kamiya, Y. Shigeta, B. Magyari-Köpe, M. Niwa, and Y. Nishi,
    Proc. 28th Int. Conf. Microel. (MIEL 2012), 2012.

  9. First principles calculations of oxygen vacancy ordering effects in resistance change memory materials incorporating binary transition metal oxides,
    B. Magyari-Köpe, S.G. Park, H.-D. Lee and Y. Nishi,
    J. Mat. Sci. 47, 7498, 2012.

  10. Lattice instabilities in metallic elements,
    G. Grimvall, B. Magyari-Köpe, V. Ozolins, and K. Persson,
    Rev. Mod. Phys. 84, 945, 2012.

  11. ON-OFF switching mechanism of resistive random access memories based on the formation and disruption of oxygen vacancy conducting channels,
    K. Kamiya, M. Yang, S. Park, B. Magyari-Köpe, Y. Nishi, M. Niwa, and K. Shiraishi,
    Appl. Phys. Lett 100, 073502, 2012.

  12. GeSn channel nMOSFETs: material potential and technological outlook,
    S. Gupta, B. Vincent, D. Lin, M. Gunji, A. Firrincieli, F. Gencarelli, B. Magyari-Köpe, B. Yang, B. Douhard, J. Delmotte, A. Franquet, M. Caymax, J. Dekoster, Y. Nishi, K. Saraswat,
    Tech. Digest, VLSI, 2012.

  13. Ab initio modeling of the resistance switching mechanism in RRAM devices: case study of hafnium oxide (HfO2),
    D. Duncan, B. Magyari-Köpe, and Y. Nishi,
    MRS Proc. 1430, 980, DOI: 10.1557/opl.2012.980, 2012.

  14. First principles investigation of the conductive filament configuration in rutile TiO2−x ReRAM,
    L. Zhao,S.-G.Park, B.Magyari-Köpe and Y.Nishi,
    MRS Proc. 1430, 1103, DOI:10.1557/opl.2012.1103, 2012.

  15. GeSn technology: extending the Ge electronics roadmap,
    S. Gupta, R. Chen, B. Magyari-Köpe, H. Lin, B. Yang, A. Nainani, Y. Nishi, J. S. Harris and K. C. Saraswat,
    IEDM Tech. Digest, 398, 2011.

  16. Understanding the switching mechanism in RRAM devices and the dielectric breakdown of ultrathin high-k gate stacks from first principles calculations,
    B. Magyari-Köpe, S. Park, H. Lee, and Y. Nishi,
    ECS Trans. - ULSI vs. TFT”, 37, 2011.

  17. Theoretical Study of the Resistance Switching Mechanism in Rutile TiO2-x for ReRAM:the role of oxygen vacancies and hydrogen impurities
    S.G. Park, B. Magyari-Köpe, and Y. Nishi,
    Tech. Digest VLSI Tech. Symp., 2011.

  18. Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0:7Ca0:3MnO3,
    B. Magyari-Köpe, M. Tendulkar, S. Park, H. Lee, and Y. Nishi,
    Nanotechnology 22, 254029, 2011.

  19. The impact of oxygen vacancies on the formation of a conductive channel in rutile TiO2,
    S. Park, B. Magyari-Köpe, and Y. Nishi,
    IEEE Electron Device Letters, 32, 197, 2011.

  20. Multi-scale simulations of partially unzipped CNT heterojunction tunneling field effect transistor,
    L. Leem, A. Srivastava, S. Li, B. Magyari-Köpe, G. Iannaccone, J.S. Harris, G. Fiori,
    IEDM Tech. Digest, 740, 2010.

  21. Model of metallic filament formation and rupture in NiO for unipolar switching,
    H. Lee, B. Magyari-Köpe, and Y. Nishi,
    Phys. Rev. B 81, 193202, 2010.

  22. Electronic correlation effects in reduced rutile TiO2-x within the LDA+U method,
    S. Park, B. Magyari-Köpe, and Y. Nishi,
    Phys. Rev. B, 82, 115109, 2010.
  23. Physical model of the impact of metal grain work function variability on emerging dual metal gate MOSFETs and its implication for SRAM reliability
    Xiao Zhang, Jing Li, Melody Grubbs, Michael Deal, Blanka Magyari-Köpe, Bruce Clemens, Yoshio Nishi,
    IEDM Tech. Digest, 57, 2009.

  24. Ab initio study of Al-Ni bilayers on SiO2: Implications to effective work function modulation in gate stacks
    B. Magyari-Köpe, S. Park, L. Colombo, Y. Nishi, and K. Cho
    J. Appl. Phys., 105, 013711, 2009.

  25. Image Charge and Dipole Combination Model for the Schottky Barrier Tuning at the Dopant Segregated Metal/Semiconductor Interface
    L. Geng, B. Magyari-Köpe, Y. Nishi
    IEEE Electron Device Letters 30, 963-965, 2009.

  26. High quality GeO2/Ge interface formed by SPA radical oxidation and uniaxial stress engineering for high performance Ge NMOSFETs
    M. Kobayashi, T. Irisawa, B. Magyari-Köpe, K. Saraswat, H.-S.P. Wong, and Y. Nishi
    IEEE Trans. Electron Devices, 2009.

  27. Uniaxial Stress Engineering for High Performance Ge NMOSFETs
    M. Kobayashi, T. Irisawa, B. Magyari-Köpe, Y. Sun, K. Saraswat, H.-S.P. Wong, P. Pianetta and Y. Nishi
    Tech. Digest VLSI Tech. Symp. p 76, 2009.

  28. Lattice and electronic effects of charged defects in rutile TiO2-x from ab initio calculations
    S. Park, B. Magyari-Köpe, and Y. Nishi
    Mat. Res. Soc. Symp. Proc., 2009.

  29. First-principles study of resistance switching in rutile TiO2 with oxygen vacancy
    S. Park, B. Magyari-Köpe, and Y. Nishi
    NVMTS (Non-Volatile Memory Technology Symposium 2008), 9th Annual, 1-5, 2008.

  30. Fermi level unpinning and Schottky barrier modification by Ti, Sc and V incorporation at NiSi2/Si interface
    L. Geng, B. Magyari-Köpe, Z. Zhang, Y. Nishi
    Chinese Physics Letters 26, 037306, 2009.

  31. Ab initio modeling of Schottky barrier height tuning by yttrium at nickel-silicide/silicon interface
    L. Geng, B. Magyari-Köpe, Z. Zhang, Y. Nishi
    IEEE Electron Device Letters 29, 746-749, 2008.

  32. Theoretical prediction of low-energy crystal structures and hydrogen storage energetics of Li2NH
    B. Magyari-Köpe, V. Ozolins and C. Wolverton
    Phys. Rev. B 73, 220101, 2006.

  33. Phase transformations between garnet and perovskite phases in the Earth’s mantle: A theoretical study
    L. Vitos, B. Magyari-Köpe, R. Ahuja, J. Kollár, G. Grimvall, and B. Johansson
    Physics of the Earth and Planetary Interiors, 156, 108, 2006.

  34. Anomalous behaviour of lattice parameters and elastic constants in hcp Ag-Zn alloys
    B. Magyari-Köpe, L. Vitos and G. Grimvall
    Phys. Rev. B 70, 052102, 2004.

  35. The orthorhombic phase of CaSiO3 perovskite
    B. Magyari-Köpe, L. Vitos, G. Grimvall, B. Johansson, and J. Kollár,
    Mat. Res. Soc. Symp. Proc. 718, (2002).

  36. Model structure of perovskites: cubic-orthorhombic phase transition
    B. Magyari-Köpe, L. Vitos, B. Johansson, and J. Kollár
    Comput. Mat. Sci. 25, 615, (2002).

  37. The origin of octahedral tilting in perovskites
    B. Magyari-Köpe, L. Vitos, B. Johansson, and J. Kollár,
    Phys. Rev. B 66, 092103, (2002).

  38. Elastic anomalies in Ag-Zn alloys B. Magyari-Köpe, G. Grimvall, L. Vitos,
    Phys. Rev. B 66, 064210, (2002).

  39. High-pressure structure of ScAlO3 perovskite
    B. Magyari-Köpe, L. Vitos, B. Johansson, and J. Kollár
    J. Geophys. Res. 107 (B7), 10.1029/2001JB000686, (2002).

  40. Self-diffusion rates in Al from combined first-principles and model-potential calculations
    N. Sandberg, B. Magyari-Köpe, and T. R. Mattsson
    Phys. Rev. Lett. 89, 065901, (2002).

  41. Low-temperature crystal structure of CaSiO3 perovskite: An ab initio total energy study
    B. Magyari-Köpe, L. Vitos, G. Grimvall, B. Johansson, and J. Kollár
    Phys. Rev. B 65, 193107, (2002).

  42. First principles simulations of phase stability in stoichiometric and doped LiMnO2
    A. I. Landa, C. C. Chang, P. N. Kumta, B. Magyari-Köpe, L. Vitos, R. Ahuja, and I. A. Abrikosov
    Mat. Res. Soc. Symp. Proc. 677, (2001).

  43. Parametrization of perovskite structures: an ab initio study
    B. Magyari-Köpe, L. Vitos, B. Johansson and J. Kollár
    Acta Cryst. B 57, 491, (2001).

  44. Ab initio study of structural and thermal properties of ScAlO3 perovskite
    B. Magyari-Köpe, L. Vitos, and J. Kollár
    Phys. Rev. B 63, 104111 (2001).

  45. Magnetic properties of the LaCu5-xCox compounds
    V. Crisan, V. Popescu, A. Vernes, D. Andreica, S. Cristea, B. Köpe
    Phys. Status Solidi A 154, 743, (1996).

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Blanka Magyari-Köpe
Last updated: 25 May, 2010