Electron Beam Lithography - JEOL 6300
Electron beam lithography uses a finely focused beam of electrons to define patterns onto a polymer-coated wafer. This "resist" pattern can then be used as a stencil to define metal lines or as a protective mask to etch features into a semiconductor wafer. Specifically, the JEOL JBX 6300 lithography system uses a high-brightness field emission electron source, a 100 keV acceleration potential, a 25 Mega-Hertz deflection system and magnetic lenses to define a beam diameter as small as 2 nm and patterns in resist as small as 8 nm. The laser-controlled stage is capable of loading 1 cm square compound semiconductor chips, up to 200 mm (8 inch) diameter silicon substrates. Upcoming nano-device research will include: nano-apertures for near-field optics, photonic crystals, novel laser structures, quantum devices to study transport in compound semiconductors, nano-CMOS. nano-magnetic memory and x-ray zone plates.