Parallel Oxidation Lithography
Oxidation of silicon with 50 probes. Probes are spaced by 200 um and each was used to draw a single line 1 cm long. The full patterned area spans 1 cm x 1 cm. The blue box in the lower left corner of the image depicts the typical scan area of a commercial AFM (100 um x 100 um).
oxidation in a controlled humidity environment ............
... ....100-nm nmosfet fabrication
......................
Questions? Comments? Mail : QuateWebmaster