We fabricated > 50 pMOSFETs with Lphysical ranging from 61 nm to 170 nm. The characteristics of a device with Leffective of 100 nm are shown below. A saturation current drive of 0.244 mA/µm and saturated transconductance (gm) of 154 mS/mm are achieved at -2 V. The threshold voltage (Vt) is -0.41 V.