Projects

On-chip nonclassical light sources
Armand, Konstantinos, Tomas, Kevin
Quantum information processing and cavity QED with quantum dots in photonic crystal nanocavities
Armand, Konstantinos, Tomas, Kevin
Silicon Carbide photonics
Tom, Kai, Marina
Electrically injected nanocavity lasers and modulators
Jan
Silicon Germanium photonics
Jan
Nonlinear optics in nanophotonic structures
Sonia, Marina, Linda
Nanophotonic devices for biomedical applications
Alex, Jan
Objective-First Design for Nanophotonics
Alex
Videos of our research

Nanocavity Lasers and Modulators

Our goal is to develop practical, electrically-controlled low-threshold nanocavity lasers and modulators for optical interconnects, telecommunications, and sensing applications.

Nanocavities can confine light in volumes smaller than a wavelength cubed while maintaining moderate to high quality factors. Such localization of light allows us to design lasers and modulators with very small active regions, enabling fast, low-energy electrical switching. Additionally, localization of light in a nanocavity increases the spontaneous emission rate into the cavity mode, reducing the laser threshold and further increasing achievable modulation rates.

We have demonstrated a record low threshold electrically-driven photonic crystal nanocavity laser at 150K using InAs quantum dots in a suspended GaAs membrane as a gain medium. We have also shown ultrafast direct modulation of a single-mode photonic crystal LED at room temperature as well as nanobeam cavity LEDs in the same material system, and have also demonstrated an ultralow-power fiber-coupled modulator using a passive GaAs photonic crystal structure. All of these devices were electrically controlled with a lateral p-i-n junction formed via ion implantation into GaAs, a method we hope to extend to other materials in a simliar configuration.

Our current work is focused on creating a low-threshold electrically driven nanocavity laser capable of operating at room temperature. We are working to counteract the decreased room-temperature gain of InAs quantum dots in GaAs, as well as exploring the higher gain and lower surface recombination offered by the InP material system.

Collaborators

last modified on Wednesday May 30, 2012