Active silicon nanophotonics

Luminescense enhancement from Si-rich nitride membrane by linear 3-defect cavity.

The Idea:

Design 2-D photonic crystal (PC) nanocavities to improve emission from silicon CMOS compatible materials, and evaluate their potential for creating a laser.

Er doped silicon-rich silicon nitride
Photonic crystal nanocavities were fabricated in silicon membranes covered by thermally annealed silicon-rich nitride films with Erbium-doped silicon nanocrystals. Silicon nitride films were deposited by sputtering on top of silicon on insulator wafers. The nanocavities were carefully designed in order to enhance emission from the nanocrystal sensitized Erbium at the 1540 nm wavelength. Experimentally measured quality factors of 6000 were found to be consistent theoretical predictions. The average Purcell factor of 1.4 was estimated from the observed 20-fold enhancement of Erbium luminescence. [APL 92, 161107 (2008); Erratum]
Silicon nitride grown by LPCVD with Si nanocrystals
We demonstrated an up to sevenfold enhancement of photoluminescence from silicon-rich silicon nitride film due to a single photonic crystal cavity. Experimentally measured cavity quality factors vary in the range of 200-300, showing excellent agreement with calculations. The emission peak can be tuned to any wavelength in the 600-800 nm range. [APL 89, 221101 (2006)]
Silicon nitride grown by PECVD with Si nanocrystals
Strained Ge quantum wells and quantum dots
Silicon oxide with Si nanocrystals
Luminescent porous Si produced by anodic etching

Er doped silicon-rich silicon nitride: Rui Li, Joe Warga, Prof. Luca Dal Negro, Boston University (2007-present)
Porous Si and LPCVD nitride growth: Hiroyuki Sanda, Prof. Yoshio Nishi (2004-2007)
PECVD nitride: Szu-Lin Cheng, Prof. Yoshio Nishi (2007-present)
Strained Ge quantum wells and quantum dots: Shen Ren, Prof. David Miller, Yijie Huo, Prof. Jim Harris. (2007-present)
Oxide with Si nanocrystals growth: Rohan Kekatpure, Prof. Mark Brongersma (2005)