2006 International Electron Devices Meeting

From: Subject: 2006 International Electron Devices Meeting Date: Mon, 2 Oct 2006 09:08:18 -0700 MIME-Version: 1.0 Content-Type: multipart/related; type="text/html"; boundary="----=_NextPart_000_0000_01C6E602.4D49E7D0" X-MimeOLE: Produced By Microsoft MimeOLE V6.00.2900.2962 This is a multi-part message in MIME format. ------=_NextPart_000_0000_01C6E602.4D49E7D0 Content-Type: text/html; charset="utf-8" Content-Transfer-Encoding: quoted-printable Content-Location: http://www.btbmarketing.com/iedm/ =EF=BB=BF 2006 International Electron Devices Meeting



2006 INTERNATIONAL ELECTRON=20 DEVICES MEETING (IEDM) 2006 IEEE=20 International Electron Devices Meeting Hilton San=20 Francisco and Towers San Francisco, CA December 11-13,=20 2006 CONTACT INFORMATION: Gary=20 Dagastine Co-Media Relations Director for=20 IEDM 518-785-2724 gdagastine@nycap.rr.com Christopher Burke Co-Media = Relations=20 Director for IEDM 919-872-8172 cburke@btbmarketing.com Phyllis Mahoney IEDM=20 Administrator 301-527-0900 Ext. 103 Fax: = 301-527-0994 phyllism@widerkehr.com Garth Miller PR Specialist for=20 IEDM 919-872-8172 gmiller@btbmarketing.com<= /A>	For 52 years the IEEE International Electron = Devices=20 Meeting (IEDM) has been the world=E2=80=99s premier forum for the = presentation of=20 advances in microelectronic and now nanoelectronic devices. The = IEDM=20 presents more leading work in more areas of the field than any = other=20 technical conference, encompassing silicon and non-silicon device=20 technology, optoelectronics, MEMS (MicroElectroMechanical = Systems),=20 displays and nanotechnology for electronics applications. This = year some=20 230 papers will be given by researchers from corporate, university = and=20 government labs worldwide. The IEDM also will include = thought-provoking=20 invited plenary talks; a stimulating luncheon speaker; evening = panel=20 debates and short courses. Welcome to the = Editor Press=20 Center. The following press materials may be downloaded = from this=20 site for pre-conference publicity for the = IEDM: 2006 IEDM Press Kit IEDM = Lead=20 Press Release Tip=20 Sheet (9-page = =E2=80=9Chighlights=E2=80=9D of IEDM=20 Technical Program) Draft=20 Advance Program (45-page preliminary listing of=20 IEDM program) 2006 IEDM=20 Photos - San Francisco, CA = image=20 (JPEG) - IEDM logo=20 (JPEG) Selected images from the abstracts are = presented in=20 two formats: - Word file with all images associated with a = highlighted paper and the caption, - JPEG file with = individual,=20 high-resolution images. Image Download 6.3 - "Ultra = High-Speed=20 Novel Bulk Thyristor-SRAM (BT-RAM) Cell With Selective Epitaxy = Anode=20 [SEA])," T. Sugizaki, Sony Image=20 with caption 6.3=20 Cheaper Thyristor - SRAM High = Resolution=20 Images 6.3_fig4a &nbs= p;6.3_fig4c 11.1 - "A Large-Area Flexible Wireless = Power=20 Transmission Sheet Using Printed Plastic MEMS Switches And=20 Organic Field-Effect Transistors," T. Sekitani, University of=20 Tokyo Image with=20 = caption 1= 1.1=20 Sheet = of=20 Power, Christmas = Tree 11.1 Sheet = of=20 Power 11.1 = Sheet of=20 Power, Laptop High=20 Resolution=20 Images 11.1_fig2<= /A> 11.1_fig3<= /A> 11.1= _fig4=20 *13.2 - "A = 45nm CMOS=20 Node Cu/Low-k/Ultra Low-k PECVD SiCOH (k=3D2.4) BEOL Technology," = S.=20 Sankaran, IBM-AMD-Sony-Toshiba* Image with=20 = caption <= A=20 class=3Dtext = href=3D"http://www.btbmarketing.com/iedm/captions/13-2.doc">13.2=20 The Back End At 45nm High Resolution = Images 13.2_fig2<= /A>=20 20.4 -=20 "Ultra-Narrow Silicon Nanowire Gate-All-Around CMOS Devices: = Impact Of=20 Diameter, Channel Orientation and Low Temperature On Device = Performance,"=20 N. Singh, Institute of Microelectronics Image with=20 = caption 2= 0.4=20 Gates = All=20 Around High Resolution=20 = Images 20.4_fig2= a 20.4_fig2= b *20.5 -=20 "Three Dimensionally Stacked SiGe Nanowire Array And = Gate-All-Around=20 P-MOSFETs," L. Bear, Institute of Microelectronics =* Image with=20 = caption 2= 0.5=20 Gates = All=20 Around High Resolution=20 Images 20.5_fig1<= /SPAN> 20.5_fig2<= /SPAN>=20 *21.1 - "A=20 0.127=C2=B5m2 High Performance 65nm SOI-Based Embedded DRAM For = On-Processor=20 Applications," G. Wang, IBM* Image with=20 = caption 2= 1.1=20 Embedded = DRAM=20 Cache High = Resolution=20 Images 21.1_fi= g5 *28.2 -=20 "CMOS Integrated DNA Microarray Based On GMR Sensors," S-J. Han, = Stanford=20* Image with=20 = caption 2= 8.2=20 Magnetic=20 Biochip High=20 Resolution=20 = Images 28.2_fig1<= /A> *30.3 -=20 "Ultra-Thin Phase-Change Bridge Memory Device Using GeSb," Y.Chen, = IBM-Qimonda-Macronix* Image with=20 = caption 3= 0.3=20 Phase = Change=20 Bridge Memory High=20 Resolution=20 = Images 30.3_fi= g1 30.3_fig2<= /A> 38.4 -=20 "Novel 3D Integration Process For Highly Scalable Nano-Beam=20 Stacked-Channels GAA (NBG) CMOSFETs With HfO2/TiN Gate Stack," = T.=20 Ernst, CEA-LETI Image with=20 = caption 3= 8.=20 Gates = All=20 Around High Resolution=20 Images 38.4_fig2<= /A> 38.4_fig4= a= 38.4_fig7<= /A>= Attendance at=20 IEDM is complementary for the press. Please note that the = conference=20 organizers are planning to have a press luncheon at the = beginning of=20 the IEDM to discuss the most interesting papers and the major=20 technology trends evident in this year's program -- we = encourage you to=20 attend; details will be provided shortly. Presenting companies=20 often make major technology announcements in conjunction = with the=20 IEDM, either at their own press events or via news=20 releases. Whether you would like to do a news story, = conference=20 preview or an in-depth exploration of a particular technology, = please=20 contact one of us for the additional information or interviews you = may=20 need. For registration and other attendance information, = the IEDM=20 2006 home page is www.ieee.org/conference/iedm . = If you plan=20 to attend, print out the page which requests your contact=20 information, write "Press" on it,and fax or mail it to = Conference=20 Manager Phyllis Mahoney, 16220 S. Frederick Ave., Gaithersburg, = MD=20 20877, USA; tel. (301) 527-0900, ext. 103; fax (301) 527-0994. Be = prepared=20 to show a business card when you arrive at the IEDM. Phyllis = also can=20 be reached by email with any registration/ attendance questions = at phyllism@widerkehr.com. <= /P>

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