Refereed Publications (McIntyre PhD advisees shown in bold)
171. R.D. Long, A. Hazeghi, M. Gunji, Y. Nishi,
and P.C. McIntyre, “Temperature-Dependent Capacitance-Voltage Analysis of Defects
in Al2O3 Gate Dielectric Stacks on GaN,” Appl. Phys. Lett. 101, 241606-1-5 (2012).
170. M. Gunji, S.V. Thombare, S. Hu, and P.C. McIntyre, “Directed Synthesis of Germanium Oxide Nanowires
by Vapor-Liquid-Solid Oxidation,” Nanotechnology
23, 385603-1-7 (2012).
169. S.V. Thombare,
A.F. Marshall, and P.C. McIntyre, “Size Effects in Vapor-Solid-Solid Ge Nanowire
Growth with a Ni-Based Catalyst,” J.
Appl. Phys. 112, 054325-1-6 (2012).
168. Y. Yuan, B. Yu, J. Ahn, P.C.
McIntyre, P.M. Asbeck, M.J.W. Rodwell,
and Y. Taur, “A Distributed Bulk-Oxide Trap Model for
Al2O3 InGaAs MOS Devices,” IEEE Trans. Electon Dev. 59, 2100-06 (2012).
167. H.-P. Chen, Y. Yuan, B. Yu, J. Ahn, P.C. McIntyre, P. M. Asbeck, M.J.W. Rodwell, and Y. Taur,
“Interface-State Modeling of Al2O3–InGaAs MOS From
Depletion to Inversion,” IEEE Trans.
Electron Dev. 59, 2383-89
(2012).
166. Y. Kawamura, K.C.Y. Huang, S.V. Thombare, S. Hu,
M. Gunji, T. Ishikawa, M.L.
Brongersma, K.M. Itoh, and P.C. McIntyre, “Direct-Gap Photoluminescence from Germanium Nanowires,” Phys. Rev. B 86, 035306-1-6 (2012).
165. R.D. Long and P.C. McIntyre, “Surface
Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide
Semiconductor Devices,” Materials 5,
1297-1335 (2012).
164. G.W. Paterson, S.J. Bentley, M.C. Holland, I. G. Thayne, J. Ahn, R. D. Long, P. C. McIntyre, and
A. R. Long, “Admittance and Subthreshold Characteristics of
Atomic-Layer-Deposition Al2O3 on In0.53Ga0.47As
in Surface and Buried Channel Flatband Metal-Oxide-Semiconductor Field Effect
Transistors,” J. Appl. Phys. 111, 104112-1-7 (2012).
163. S. Hu, Y. Kawamura, K.C.Y. Huang, Y. Li, A.F. Marshall, K.M.
Itoh, M. Brongersma, and P.C. McIntyre,
“Thermal Stability and Surface Passivation of Ge Nanowires Coated by
Epitaxial SiGe Shells,” Nano Lett. 12, 1385-92 (2012).
162. S. Hu and P.C. McIntyre, “Nucleation and Growth Kinetics during
Metal-Induced Layer Exchange Crystallization of Ge Thin Films at Low
Temperatures,” J. Appl. Phys. 111, 044908-1-9 (2012).
161. J. Ahn, I. Geppert, M.
Gunji, M. Holland, I. Thayne, M. Eizenberg, and P.C. McIntyre, “Titania/alumina
Bilayer Gate Insulators for InGaAs Metal-Oxide-Semiconductor Devices,” Appl. Phys. Lett. 99, 232902-1-3 (2011).
160. S. Swaminathan, Y. Sun, P. Pianetta, and P.C. McIntyre, “Ultrathin ALD-Al2O3
Layers for Ge(001) Gate Stacks: Local Composition Evolution and Dielectric
Properties,” J. Appl. Phys. 110, 094105-1-6 (2011).
159. A.Y. Lin and P.C. McIntyre,
“Morphological Stability of Mesoporous Pt Thin Films Deposited via Nanosphere
Lithography on YSZ,” Electrochem. Solid
State Lett. 14, B96-99 (2011).
158. R.J. Zednik, V. Anbusathaiah, M.
Oliver, N. Valanoor, and P.C. McIntyre, “Mobile Ferroelastic Domain Walls
in Nanocrystalline PZT Films: the Direct Piezoelectric Effect,”
Adv. Functional Mater. 21, 3104-10 (2011).
157. Y.W. Chen, J.D. Prange, S. Dühnen,
Y. Park, M. Gunji, C.E.D. Chidsey,
and P.C. McIntyre, “Atomic Layer-Deposited Tunnel
Oxide Stabilizes Silicon Photoanodes for Water Oxidation,”
Nature Mater. 10, 539-44 (2011).
156. R.D. Long, B. Shin, S. Monaghan, K.
Cherkaoui, J. Cagnon, S. Stemmer, P.C. McIntyre, P.K. Hurley, “Charged
Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP
MOS Capacitors,” J. Electrochem. Soc.
158, G103-07 (2011).
155. Y. Yuan,
L.Q. Wang, B. Yu, B.H. Shin, J. Ahn,
P.C. McIntyre, P.M. Asbeck, M.J.W. Rodwell, and Y. Taur, “A
Distributed Model for Border Traps in Al2O3 - InGaAs MOS
Devices,” IEEE Electron. Dev.
Lett. 32, 485-87 (2011).
154. S.J.
Bentley, M. Holland, X. Li, G.W. Paterson, H.P. Zhou, O. Ignatova, D.
Macintyre, S. Thoms, A. Asenov, B.H. Shin, J.
Ahn, P.C. McIntyre, and I.G. Thayne, “Electron Mobility in Surface-
and Buried-Channel Flatband In0.53Ga0.47As MOSFETs with
ALD Al2O3 Gate Dielectric,” IEEE Electron. Dev. Lett. 32,
494-96 (2011).
153. M. Gunji, A.F. Marshall, and P.C.
McIntyre, “Strain Relaxation Mechanisms in Compressively Strained Thin
SiGe-on-Insulator Films Grown by Selective Si Oxidation,”
J. Appl. Phys. 109, 014324-1-6 (2011).
152. E.J. Kim, M. Shandalov, K.C. Saraswat,
and P.C. McIntyre, “Inelastic Electron Tunneling
Study of Crystallization Effects and Defect Energies in Hafnium Oxide Gate
Dielectrics,” Appl. Phys. Lett.
98, 032108-1-3 (2011).
151.A.F.
Marshall, I.A. Goldthorpe, H. Adhikari, M. Koto, Y-C. Wang, L. Fu,
E. Olsson, P.C. McIntyre, “Hexagonal Close-Packed Structure
of Au Nanocatalysts Solidified after Ge Nanowire Vapor-Liquid-Solid Growth,” Nano Lett. 10, 3302-06 (2010).
150. K.
Roodenko, I.A. Goldthorpe, P.C. McIntyre, and Y.J. Chabal, “Modified
Phonon Confinement Model for Raman Spectroscopy of Nanostructured Materials,” Phys. Rev. B.82, 115210-1-11
(2010).
149. S. Hu, A.F. Marshall, and P.C.
McIntyre, “Interface-Controlled Layer Exchange in Metal-Induced
Crystallization of Germanium Thin Films,” Appl. Phys. Lett. 97, 082104-1-3 (2010).
148. C. Ko, M.
Shandalov, P.C. McIntyre, and S. Ramanathan, “High Temperature Electrical
Conduction in Nanoscale Hafnia Films under Varying Oxygen Partial Pressure,”
Appl. Phys. Lett. 97, 082102-1-3 (2010).
147. S. Swaminathan and P.C. McIntyre, “Titania/Alumina
Bilayer Gate Dielectrics for Ge MOS Devices: Frequency- and
Temperature-Dependent Electrical Characteristics,” Electrochem. Solid-StateLett. 13,
G79-82 (2010).
146. B. Shin,
J.B. Clemens, M.A. Kelly, A.C. Kummel, and P.C. McIntyre, “Arsenic Decapping
and Half-Cycle Reactions during Atomic Layer Deposition of Al2O3
on In0.53Ga0.47As (001),” Appl. Phys. Lett. 96,
252907-1-3 (2010).
145. M. Koto,
A.F. Marshall, I.A. Goldthorpe, and
P.C. McIntyre, “Gold-Catalyzed Vapor–Liquid–Solid Germanium-Nanowire Nucleation
on Porous Silicon,” Small 6, 1032-37 (2010).
144.S. Swaminathan, M. Shandalov, Y.
Oshima, and P.C. McIntyre, “Bilayer Metal Oxide Gate Insulators for Scaled
Ge-Channel Metal-Oxide-Semiconductor Devices,” Appl. Phys. Lett. 96,
082904-1-3 (2010).
143. B. Shin,
J.R. Weber, R.D. Long, P.K. Hurley, C.G. Van de Walle, and P.C.McIntyre,
“Origin and Passivation of Fixed Charge in Atomic Layer Deposited Aluminum
Oxide Gate Insulators on Chemically Treated InGaAs Substrates,” Appl. Phys. Lett. 96, 152908-1-3 (2010).
142. P.C. McIntyre, H.
Adhikari, I.A. Goldthorpe, S. Hu, P.W. Leu, A.F. Marshall, and C.E.D. Chidsey, “Group IV
Semiconductor Nanowire Arrays: Epitaxy in Different Contexts,” Semicond. Sci. Technol. 25, 024016-1-9 (2010).
141. Y.W. Chen, M. Liu, T. Kaneko, and P.C.
McIntyre, “Atomic Layer Deposited Hafnium Oxide Gate Dielectrics for
Charge-Based Biosensors,” Electrochem.
Solid-State Lett. 13, G29-32 (2010).
140. E.J. Kim, L.Q. Wang, P.M. Asbeck, K.C.
Saraswat, and P.C. McIntyre, “Border Traps in
Al2O3/In0.53Ga0.47As (100) Gate
Stacks and Their Passivation by Hydrogen Anneals,” Appl. Phys. Lett. 96,
012906-1-3 (2010)
139. E.J. Kim, E. Chagarov, J. Cagnon, Y. Yuan, A.C. Kummel, P.M.
Asbeck, S. Stemmer, K.C. Saraswat, and P.C. McIntyre,”Atomically Abrupt and Unpinned Al2O3/ In0.53Ga0.47As
Interfaces: Experiment and Simulation,” J. Appl. Phys. 106,
124508-1-8 (2009).
138. M.A. Panzer, M. Shandalov, J.A. Rowlette, Y. Oshima, Y.W. Chen, P.C.McIntyre, and K.E.
Goodson, “Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films,” IEEE Electron Dev. Lett. 30, 1269-71 (2009).
137. I.A. Goldthorpe, A.F. Marshall and P.C.
McIntyre, “Inhibiting
Strain-Induced Surface Roughening: Dislocation-Free Ge/Si and Ge/SiGe Core-Shell Nanowires,” Nano Lett. 9, 3715-19 (2009).
136. M. Shandalov and
P.C. McIntyre, “Size-dependent Polymorphism in
HfO2 Nanotubes and Nanoscale Thin Films,” J. Appl. Phys. 106,
084332-1-5 (2009).
135. U. Singisetti, M.A. Wistey, G.J. Burek, A.K. Baraskar, B.J. Thibeault,
A.C. Gossard, M.J. Rodwell, B. Shin, E.J.
Kim, P.C. McIntyre, B. Yu, Y. Yuan, D. Wang, Y. Taur, P. Asbeck, and Y.J.
Lee, (“In0.53Ga0.47As Channel MOSFETs with
Self-Aligned InAs Source/Drain Formed by MEE Regrowth,” IEEE ElectronDev. Lett. 30,
1128-30 (2009).
134. S. Hu, P.W. Leu, A.F. Marshall and P.C. McIntyre, “Single-Crystal
Germanium Layers Grown on Silicon by Nanowire Seeding,” Nature Nanotechnology 4,
649-53 (2009).
133. J.B Ratchford, I.A Goldthorpe, Y. Sun, P.C. McIntyre,
P.A. Pianetta, and C.E.D.Chidsey, “Gold Removal from Germanium Nanowires,” Langmuir 25, 9473-79(2009).
132. R.M. Wallace,
P.C. McIntyre, J. Kim, and Y. Nishi, “Atomic Layer Deposition of Dielectrics on
Ge and III-V Materials for Ultrahigh Performance Transistors,” MRS Bull. 34, 493-503 (2009).
131. S. Swaminathan, Y. Oshima, M.A. Kelly,
and P.C. McIntyre, “Oxidant Prepulsing
of Ge (100) prior to Atomic Layer Deposition of Al2O3:
In Situ Surface Characterization,” Appl. Phys. Lett. 95, 032907-1-3 (2009).
130. P.C. McIntyre, Y.
Oshima, E. Kim, K.C. Saraswat,
“Interface Studies of ALD-Grown Metal Oxide Insulators on Ge and III–V
Semiconductors,” Microelectron.
Engineering 86, 1536–39 (2009).
129. B. Shin, J.
Cagnon, R.D. Long, P.K. Hurley, S. Stemmer, and P.C. McIntyre, “Unpinned
Interface Between Al2O3 Gate Dielectric Layer Grown by
AtomicLayer Deposition and Chemically Treated n-In0.53Ga0.47As (001),” Electrochem. Solid-State Lett. 12, G40-43 (2009).
128. D. Choi, J.S.
Harris, E. Kim, P.C. McIntyre, J. Cagnon, and S. Stemmer, “High-Quality
III–V Semiconductor MBE Growth on Ge/Si Virtual Substrates for
Metal-Oxide-Semiconductor Device Fabrication,” J. Crystal Growth 311,
1962-71 (2009).
127. Y. Oshima, M.
Shandalov, Y. Sun, P. Pianetta, and P.C. McIntyre, “Hafnium Oxide/Germanium Oxynitride Gate Stacks on Germanium:
Capacitance Scaling and Interface State Density,” Appl. Phys. Lett. 94, 183102-1-3 (2009).
126. J.B. Ratchford, I.A. Goldthorpe, P.C. McIntyre, and
C.E.D. Chidsey, “Growth of Germanium
Crystals from Electrodeposited Gold in Local Crucibles,” Appl. Phys. Lett. 94, 044103-1-3 (2009).
125. M. Koto, P.W. Leu, and P.C. McIntyre, “Vertical Germanium Nanowire Arrays in
Microfluidic Channels for Charged Molecule Detection,” J. Electrochem. Soc. 156, K11-16 (2009).
124. P.W. Leu, H.
Adhikari, M. Koto, K-H. Kim, P. de Rouffignac, A.F. Marshall, R.G. Gordon,
C.E.D. Chidsey and P.C. McIntyre,
“Oxide-Encapsulated Vertical Germanium Nanowire Structures and their DC
Transport Properties,”Nanotechnology 19,
485705-1-9 (2008).
123. Y. Oshima, Y.
Sun, D. Kuzum, T. Sugawara, K.C. Saraswat, P. Pianetta, and P.C. McIntyre,
“Chemical Bonding, Interfaces, and Defects in Hafnium Oxide/Germanium
Oxynitride Gate Stacks on Ge(100),” J. Electrochem. Soc. 155,
G304-09 (2008).
122. I.A. Goldthorpe, A.F. Marshall, and
P.C. McIntyre, “Synthesis and Strain Relaxation of Ge-Core/Si-Shell Nanowire
Arrays,” Nano Lett. 8, 4081-86 (2008).
121. A. Delabie, D.P. Brunco, T. Conard, P. Favia,
H. Bender, A. Franquet, S. Sioncke, W. Vandervorst, S. Van Elshocht, M. Heyns,
M. Meuris, E. Kim, P.C. McIntyre, K.C. Saraswat, J.M. LeBeau, J.Cagnon,
S. Stemmer, and W. Tsai, “Atomic Layer Deposition of Hafnium Oxide on Ge and
GaAs Substrates: Precursors and Surface Preparation,” J. Electrochem.
Soc. 155, H937-44
(2008).
120. B. Shin, D. Choi, J.S. Harris, and P.C. McIntyre, ““Pre-Atomic Layer Deposition Surface Cleaning and Chemical
Passivation of (100) In0.2Ga0.8As and Deposition of Ultrathin Al2O3 Gate insulators,”
Appl. Phys. Lett. 93, 052911-1-3 (2008).
119. P.T.
Chen, B.B. Triplett, J.J.
Chambers, L. Colombo, P.C. McIntyre, and Y.
Nishi, “Analysis of Electrically
Biased Paramagnetic Defect Centers in HfO2 and HfxSi1−xO2
/(100) Si Interfaces,” J. Appl. Phys. 104, 014106 (2008).
118. V. Schmidt, P.C. McIntyre and U. Göesele, “Morphological
Instability of Misfit-Strained Core-Shell Nanowires,” Phys. Rev. B 77, 235302
(2008).
117. N. Ozguven and
P.C. McIntyre, “Silicon-Germanium Interdiffusion in High-Germanium-Content
Epitaxial Heterostructures,” Appl. Phys.
Lett. 92, 181907-1-3 (2008).
116. D. Choi, E. Kim,
P.C. McIntyre, and J.S. Harris, “Molecular-Beam Epitaxial Growth of III-V
Semiconductors on Ge/Si for Metal-Oxide-Semiconductor Device Fabrication,” Appl. Phys. Lett. 92, 203502-1-3 (2008).
115. N. Ozguven and
P.C. McIntyre, “Selective Oxidation of SiGe Alloys: A Route to Ge-on-Insulator
Structures with Controlled Biaxial Strain,” Electrochem.
Solid-State Lett. 11, H138-42
(2008).
114. P.T. Chen, Y. Sun, E.
Kim, P.C. McIntyre, W. Tsai, M. Garner, P. Pianetta, Y. Nishi, and C.O.
Chui, “HfO2 Gate Dielectric on (NH4)2S
Passivated (100) GaAs Grown by Atomic Layer Deposition,” J. Appl. Phys. 103,
034106 (2008).
113. D. Kuzum, T. Krishnamohan, A.J. Pethe, A.K. Okyay, Y. Oshima,
Y. Sun, J.P. McVittie, P.A. Pianetta, P.C. McIntyre, and K.C. Saraswat,
“Ge-Interface Engineering with Ozone Oxidation for Low Interface-State
Density,” IEEE Electron Dev. Lett. 29, 328-30 (2008).
112. H. Adhikari, A.F.
Marshall, I.A. Goldthorpe, C.E. D.
Chidsey, and P.C. McIntyre, “Metastability
of Au−Ge Liquid Nanocatalysts: Ge Vapor–Liquid–Solid Nanowire Growth Far
below the Bulk Eutectic Temperature,” ACS
Nano 1, 415-22 (2007).
111. Y. Chen and P.C.
McIntyre, “Effects of Chemical Stability of Platinum/Lead Zirconate Titanate
and Iridium Oxide/Lead Zirconate Titanate interfaces on Ferroelectric Thin Film
Switching Reliability,” Appl. Phys. Lett.
91, 232906-1-3 (2007).
110. H. Adhikari, P.C.
McIntyre, A.F. Marshall, and C.E.D. Chidsey, “Conditions for Subeutectic Growth
of Ge nanowires by the Vapor-Liquid-Solid Mechanism,” J.
Appl. Phys. 102, 094311 (2007).
109. Y. Chen and P.C.
McIntyre, “Lead Zirconate Titanate Ferroelectric Thin Film Capacitors: Effects
of Surface Treatments on Ferroelectric Properties,” Appl. Phys. Lett. 91,
072910-1-3 (2007).
108. C.N. Ginestra, R.
Sreenivasan, A. Karthikeyan, S. Ramanathan, and P.C. McIntyre, “Atomic Layer Deposition of Y2O3/ZrO2
Nanolaminates: A Route to Ultrathin Solid-State Electrolyte Membranes,” Electrochem. Solid-State Lett. 10,
B161-65 (2007).
107. J.H. Woodruff, J.B. Ratchford, I.A. Goldthorpe, P.C. McIntyre, and C.E.D. Chidsey, “Vertically Oriented Germanium Nanowires Grown
from Gold Colloids on Silicon Substrates and Subsequent Gold Removal,” Nano Lett. 7, 1637-42 (2007).
106. R.J. Zednik, P.C.
McIntyre, J.D. Baniecki, M. Ishii, T. Shioga, K. Kurihara, “Relaxorlike Dielectric Behavior in Ba0.7Sr0.3TiO3
Thin Films,” J. Appl. Phys. 101,
066104 (2007).
105. T. Sugawara, Y. Oshima, R.
Sreenivasan, and P.C. McIntyre, “Electrical
Properties of Germanium/Metal-Oxide Gate Stacks with Atomic Layer Deposition
Grown Hafnium-Dioxide and Plasma-Synthesized Interface Layers,” Appl. Phys. Lett. 90, 112912-1-3
(2007).
104. J.H. Ha, K.I. Seo, P.C. McIntyre, K.C. Saraswat,
and K. Cho, “Fluorine Incorporation at
HfO2/SiO2 Interfaces in High-k Metal-Oxide-Semiconductor
Gate Stacks: Local Electronic Structure,” Appl.
Phys. Lett. 90, 112911-1-3 (2007).
103. R. Sreenivasan, T.
Sugawara, K.C. Saraswat, and P.C. McIntyre, “High Temperature Phase Transformation of Tantalum Nitride Films Deposited
by Plasma Enhanced Atomic Layer Deposition for Gate Electrode Applications,” Appl. Phys. Lett. 90, 102101-1-3
(2007).
102. Z. Wang, P.B. Griffin, J. McVittie, S. Wong, and P.C.
McIntyre, and Y. Nishi, “Resistive Switching Mechanism in ZnxCd1-xS
Nonvolatile Memory Devices,” IEEE
Electron Dev. Lett. 28, 14-16
(2007).
101. J. Hong, D.W. Porter, R.
Sreenivasan, P.C. McIntyre, and S.F. Bent, “ALD Resist Formed by
Vapor-Deposited Self-Assembled Monolayers,” Langmuir
23, 1160-65 (2007).
100. J-H. Ha, P.C.
McIntyre, and K. Cho, “First Principles Study of the HfO2/SiO2
Interface: Application to High-k Gate Structures,” J. Appl. Phys. 101
033706-1-6 (2007).
99. N. Ozguven and
P.C. McIntyre, “Oxidation-Enhanced Interdiffusion in Si1-xGex
Si1-yGey Superlattices,” Appl. Phys. Lett. 90
082109-1-3 (2007).
98. K-I. Seo, D-I. Lee, P. Pianetta, H. Kim,
K.C. Saraswat, and P.C. McIntyre, “Chemical States and Electrical Properties of
a High-k Metal Oxide/Silicon Interface with Oxygen-Gettering
Titanium-Metal-Overlayer,” Appl. Phys.
Lett. 89, 142912-1-3
(2006).
97. K-I. Seo, R. Sreenivasan, P.C. McIntyre, and K.C.
Saraswat, “Improvement in High-k (HfO2/SiO2) Reliability
by Incorporation of Fluorine,” IEEE
Electron Dev. Lett. 27, 821-3
(2006).
96. R. Sreenivasan,
P.C. McIntyre, H. Kim, and K.C.
Saraswat, “Effect of Impurities on the Fixed Charge of Nanoscale HfO2
Films Grown by Atomic Layer Deposition,” Appl.
Phys. Lett. 89, 112903-1-3
(2006).
95. A.K. Okyay, A.M. Nayfeh, K.C. Saraswat, T. Yonehara, A.
Marshall, and P.C. McIntyre, “High-Efficiency Metal-Semiconductor-Metal
Photodetectors on Heteroepitaxially Grown Ge on Si,” Optics Lett. 31, 2565-7
(2006).
94. T. Sugawara, R.
Sreenivasan, and P.C. McIntyre, “Physical and Electrical Properties of
Plasma Nitrided Germanium Oxynitride,” J.
Vac. Sci. Technol. B. 24, 2449-56 (2006).
93. T. Sugawara, R. Sreenivasan,
and P.C. McIntyre, “Mechanism of Germanium Plasma Nitridation,” J. Vac. Sci. Technol. B.
24, 2442-8 (2006).
92. H. Jagannathan, M. Deal,
Y. Nishi, J. Woodruff, C. Chidsey, and P.C. McIntyre, “Nature of Germanium
Nanowire Heteroepitaxy on Silicon Substrates,” J. Appl. Phys. 100,
024318 (2006).
91. C.O. Chui, H. Kim, D. Chi, P.C. McIntyre, and K.C. Saraswat, “Nanoscale Germanium MOS
Dielectrics - Part II: High-kapp Gate Dielectrics,” IEEE Trans. Electron Dev. 53,
1509-16 (2006).
90. H. Kim and P.C.
McIntyre, “Atomic Layer Deposition of Ultrathin Metal-Oxide Films for
Nano-Scale Device Applications,” J.
Korean Phys. Soc. 48, 5-17
(2006).
89. H. Adhikari,
A.F. Marshall, C.E.D. Chidsey, and P.C. McIntyre, “Germanium Nanowire Epitaxy:
Shape and Orientation Control,” Nano Lett.
6, 318-23 (2006).
88. K-I. Seo, D-I.
Lee, P. Pianetta, H. Kim, K.C.
Saraswat, and P.C. McIntyre, “Chemical States and Electrical Properties of a
High- k Metal Oxide/Silicon Interface with Oxygen-Gettering
Titanium-Metal-Overlayer,” Appl. Phys.
Lett. 89, (2006).
87. H. Adhikari,
P.C. McIntyre, S.Y. Sun, P. Pianetta, and C.E.D. Chidsey, “Photoemission
Studies of Passivation of Germanium Nanowires,” Appl. Phys. Lett. 87,
263109 (2005).
86. L.F. Welz, S.J. Welz, N.D. Browning, M. Kurasawa, and P.C.
McIntyre, “Z-Contrast and Electron Energy Loss Spectroscopy Study of Passive
Layer Formation at Ferroelectric PbTiO3/Pt Interfaces,” Appl. Phys. Lett. 87, 262904 (2005).
85. R-V. Wang, P.C.
McIntyre, J.D. Baniecki, K. Nomura, T. Shioga, K. Kurihara, and M. Ishii,
“Effect of Y Doping and Composition-Dependent Elastic Strain on the Electrical
Properties of (Ba,Sr)TiO3 Thin Films Deposited at 520°C,” Appl. Phys. Lett. 87,
1-3 (2005).
84. H. Kim, K.C.
Saraswat, and P.C. McIntyre, “Comparative
Study on Electrical and Microstructural Characteristics of ZrO2 and
HfO2 Grown by Atomic Layer Deposition,” J. Mater. Res. 20,
3125-32 (2005).
83. D.B. Aubertine and P.C. McIntyre,
“Influence of Ge Concentration and Compressive Biaxial Stress on Interdiffusion
in Si-Rich SiGe Alloy Heterostructures,” J.
Appl. Phys. 97, 13531-1 (2005).
82. R.-V. Wang and
P.C. McIntyre, “O18 Tracer Diffusion in Pb(Zr,Ti)O3 Thin Films: A Probe of Local Oxygen Vacancy
Concentration,” J. Appl. Phys. 97, 023508-1 (2005).
81. A.F. Marshall, D.B.
Aubertine, W.D. Nix, and P.C. McIntyre, “Misfit Dislocation dissociation
and Lomer Formation in Low Mismatch SiGe/Si Heterostructures,” J. Mater. Res. 20, 447 (2005).
80. R. Chen, H. Kim, P.C. McIntyre, and S.F. Bent, “Investigation of
Self-Assembled Monolayer Resists for Hafnium Dioxide Atomic Layer Deposition,” Chem. Mater. 17, 536 (2005).
79. K.-I.
Seo, P.C. McIntyre, H. Kim, and
K.C. Saraswat, “Formation of an Interfacial Zr-Silicate Layer Between ZrO2
and Si through In Situ Vacuum Annealing,” Appl.
Phys. Lett. 86, 82904-1 (2005).
78. R. Chen, H. Kim, P.C. McIntyre, D.W. Porter, and S.F. Bent, “Achieving
Area-Selective Atomic Layer Deposition on Patterned Substrates by Selective
Surface Modification,” Appl. Phys. Lett.,
86, 191910-1 (2005)
77. M. Kurasawa and P.C. McIntyre, “Surface
Passivation and Electronic Structure Characterization of PbTiO3 Thin
Films and Pt/PbTiO3 Interfaces,” J.
Appl. Phys. 97, 104110-1 (2005).
76. K.-I. Seo, P.C.
McIntyre, S. Sun, D.-I. Lee, P. Pianetta, and K.C. Saraswat, “Chemical States
and Electronic Structure of a HfO2/Ge(001) Interface,” Appl. Phys. Lett. 87, 42902-1 (2005).
75. J-H. Ha, D. Chi, and P.C. McIntyre, “In Situ
Low-Angle X-Ray Scattering Study of Phase Separation in Initially Mixed HfO2-SiO2
Thin Film Interfaces,” Appl. Phys. Lett.
85, 5884-86 (2004).
74. D. Chi and P.C.
McIntyre, “Film and Interface Layer Properties of Ultraviolet-Ozone Oxidized
Hafnia and Zirconia Gate Dielectrics on Silicon Substrates,” Appl. Phys. Lett. 85, 5884-86 (2004).
73. H. Kim, P.C.
McIntyre, C.O. Chui, K.C. Saraswat, and M.H. Cho, “Interfacial Characteristics
of HfO2 Grown on Nitrided Ge (100) Substrates by Atomic-Layer
Deposition,” Appl. Phys. Lett. 85, 2902-04 (2004).
72. H. Kim, P.C.
McIntyre, C.O. Chui, K.C. Saraswat, and S. Stemmer, “Engineering Chemically
Abrupt High-k Metal Oxide/Silicon Interfaces Using an Oxygen-Gettering Metal
Overlayer,” J. Appl. Phys. 96, 3467-72 (2004).
71. D. Chi, C.O.
Chui, K.C. Saraswat, B.B. Triplett, and P.C. McIntyre, “Zirconia Grown by
Ultraviolet Ozone Oxidation on Germanium (100) Substrates,” J. Appl. Phys. 96, 813-19 (2004).
70. R. Chen, H. Kim,
P.C. McIntyre, and S.F. Bent, “Self-Assembled Monolayer Resist for Atomic Layer
Deposition of HfO2 and ZrO2 High-k Gate Dielectrics,” Appl. Phys. Lett. 84, 4017-19 (2004).
69. C.O. Chui, H. Kim,
P.C. McIntyre, and K.C. Saraswat, “Atomic Layer Deposition of High-k Dielectric for Germanium
MOS Applications – Substrate,” IEEE
Electron Dev. Lett. 25, 274-6
(2004).
68. L.F. Schloss, H. Kim,
and P.C. McIntyre, “Oxygen Permeability of Ferroelectric Thin Film Top
Electrodes and Its Effect on Detectable Fatigue Cycling-Induced Oxygen Isotope
Motion,” J. Mater. Res. 19, 1265-72 (2004).
67. H. Kim, A.F.
Marshall, P.C. McIntyre, and K.C. Saraswat, “Crystallization Kinetics and Microstructure-Dependent
Leakage Current Behavior of Ultrathin HfO2 Dielectrics: In Situ
Annealing Studies,” Appl. Phys. Lett.
84, 2064-66 (2004).
66. M.H. Cho, H.S. Chang, D.W. Moon, S.K. Kang, B.K. Min, D.H.
Ko, H.S. Kim, P.C. McIntyre, J.H.
Lee, J.H. Ku, and N.I. Lee, “Interfacial Characteristics of HfO2
Films Grown on Strained Si0.7Ge0.3 by Atomic-Layer
Deposition,” Appl. Phys. Lett. 84, 1171-73 (2004).
65. H.S. Kim, P.C.
McIntyre, and K.C. Saraswat, “Microstructural Evolution of ZrO2-HfO2
Nanolaminate Structures Grown by Atomic Layer Deposition,” J. Mater. Res. 19,
643-50 (2004).
64. S. Ramanathan,
P.C. McIntyre, S. Guha, and E. Gusev, “Charge Trapping Studies on Ultrathin ZrO2
and HfO2 High-k Dielectrics Grown by Room Temperature Ultraviolet
Ozone Oxidation,” Appl. Phys. Lett. 84, 389-91 (2004).
63. S. Ramanathan,
P.C. McIntyre, J. Luning, P.S. Lysaght, Y. Yang, Z.Q Chen, and S. Stemmer,
“Phase Separation in Hafnium Silicates for Alternative Gate Dielectrics:
Influence on the Unoccupied States” J.
Electrochem. Soc. 150, F173-77
(2003).
62. H. Kim, C.O.
Chui, K.C. Saraswat, and P.C. McIntyre, “Local Epitaxial Growth of ZrO2
on Ge (100) Substrates by Atomic Layer Epitaxy,” Appl. Phys. Lett. 83,
2647-49 (2003).
61. D.W. Wang, Q. Wang, A. Javey, R. Tu, H.J Dai, H. Kim, P.C. McIntyre, T. Krishnamohan,
and K.C. Saraswat, “Germanium Nanowire Field-Effect Transistors with SiO2
and High-k
HfO2 Gate Dielectrics,” Appl.
Phys. Lett. 83, 2432-34 (2003).
60. R-V. Wang and P.C. McIntyre, “Point
Defect Distributions and Their Electrical Effects on (Ba,Sr)TiO3/Pt
Thin Films,” J. Appl. Phys. 94, 1926-33 (2003).
59. D.B. Aubertine, N. Ozguven, P.C. McIntyre, and S.
Brennan, “Analysis of X-ray Diffraction as a Probe of Interdiffusion in Si/SiGe
Heterostructures,” J. Appl. Phys. 94, 1557-64 (2003).
58. M.B. Kelman,
P.C. McIntyre, B.C. Hendrix, S.M. Bilodeau, and J.F. Roeder, “Effect of Applied
Mechanical Strain on the Ferroelectric and Dielectric Properties of Pb(Zr0.35Ti0.65)O3
Thin Films,” J. Appl. Phys. 93, 9231-36 (2003).
57. S. Ramanathan, D. Chi, P.C. McIntyre, C.J. Wetteland,
and R. Tesmer, “Ultraviolet-Ozone Oxidation of Metal Films,” J. Electrochem. Soc. 150, F110-15 (2003).
56. S.Y. Lee, H. Kim,
P.C. McIntyre, K.C. Saraswat, and J.S. Byun, “Atomic Layer Deposition of ZrO2
on W for Metal-Insulator-Metal Capacitor Application,” Appl. Phys. Lett. 82,
2874-2876 (2003).
55. L.F. Schloss and P.C. McIntyre, “Polarization Recovery of
Fatigued Pb(Zr,Ti)O3 Thin Films: Switching Current Studies,” J. Appl. Phys. 93, 1743-47 (2003).
54. H. Kim, P.C.
McIntyre, and K.C. Saraswat, “Effects of Crystallization on the Electrical
Properties of Ultrathin HfO2 Dielectrics Grown by Atomic Layer
Deposition,” Appl. Phys. Lett. 82, 106-08 (2003).
53. M.B. Kelman,
P.C. McIntyre, B.C. Hendrix, S.M. Bilodeau, J.F. Roeder, and S. Brennan,
“Structural Analysis of Coexisting Tetragonal and Rhombohedral Phases in
Polycrystalline Pb(Zr0.35Ti 0.65)O3 Thin
Films,” J. Mater. Res. 18, 173-9 (2003).
52. D.B. Aubertine, M.A. Mander, N. Ozguven, A.F. Marshall, P.C. McIntyre, J.O. Chu, and P.M.
Mooney, “Observation and Modeling of the Initial Fast Interdiffusion Regime in
Si/SiGe Multilayers,” J. Appl. Phys. 92, 5027-35 (2002).
51. H. Kim and P.C.
McIntyre, “Spinodal Decomposition in Amorphous Metal-Silicate Thin Films: Phase
Diagram Analysis and Interface Effects on Kinetics,” J. Appl. Phys. 92,
5094-102 (2002).
50. L.F. Schloss, P.C. McIntyre, B.C. Hendrix, S.M. Bilodeau,
J.F. Roeder, and S.R. Gilbert, “Oxygen Tracer Studies of Ferroelectric Fatigue
in Pb(Zr,Ti)O3 Thin Films,” Appl.
Phys. Lett. 81, 3218-20 (2002).
49. R.V. Wang, R.J. Becker, and P.C.
McIntyre, “Effects of Long-Time DC Bias on D2O- and D2/N2-Annealed
BST Thin Films,” J. Electroceramics 9,
25-30 (2002).
48. S. Ramanathan,
P.C. McIntyre, J. Luning, P. Pianetta, and D.A. Muller, “Structural Studies of
Ultrathin Zirconia Dielectrics,” Phil.
Mag. Lett. 82, 519-28 (2002).
47. C.M. Perkins,
B.B. Triplett, P.C. McIntyre, K.C. Saraswat, and E. Shero, “Thermal Stability
of Polycrystalline Silicon Electrodes on ZrO2 Gate Dielectrics,” Appl. Phys. Lett. 81,
1417-19 (2002).
46. C.O. Chui, S.
Ramanathan, B.B. Triplett, P.C. McIntyre, and K.C. Saraswat, “Germanium MOS
Capacitors Incorporating Ultrathin High-K Gate Dielectric,” IEEE Electron Dev. Lett. 23, 473-75 (2002).
45. S. Ramanathan
and P.C. McIntyre, “Ultrathin Zirconia/SiO2 Dielectric Stacks Grown
by Ultraviolet-Ozone Oxidation,” Appl.
Phys. Lett. 80, 3793-95 (2002).
44. S. Ramanathan,
C.M. Park, and P.C. McIntyre, “Electrical Properties of Thin Film Zirconia
Grown by Ultraviolet Ozone Oxidation,” J.
Appl. Phys. 91, 4521-27 (2002).
43. M.B. Kelman,
L.F. Schloss, P.C. McIntyre, B.C. Hendrix, S.M. Bilodeau, and J.F. Roeder,
“Thickness-Dependent Phase Evolution of Polycrystalline Pb(Zr0.35Ti0.65)O3
Thin Films,” Appl. Phys. Lett. 80, 1258-60 (2002).
42. A. Javey, H. Kim,
M. Brink, Q. Wang, A. Ural, J. Guo, P. McIntyre, P. McEuen, M. Lundstrom, and
H.J. Dai, “High-k Dielectrics for advanced Carbon-Nanotube Transistors and
Logic Gates,” Nature Mater. 1, 241-46 (2002).
41. S. Ramanathan,
D.A. Muller, G.D. Wilk, C.M. Park, and P.C. McIntyre, “Effect of Oxygen
Stoichiometry on the Electrical Properties of Zirconia Gate Dielectrics,” Appl. Phys. Lett. 79, 3311-13 (2001).
40. S. Ramanathan,
G.D. Wilk, D.A. Muller, C.M. Park, and P.C. McIntyre, “Growth and
Characterization of Ultrathin Zirconia Dielectrics Grown by Ultraviolet Ozone
Oxidation,” Appl. Phys. Lett. 79, 2621-3 (2001).
39. S. Ramanathan,
B.M. Clemens, P.C. McIntyre, and U. Dahmen, “Microstructural Study of Epitaxial
Platinum and Permalloy/Platinum Films Grown on (0001) Sapphire,” Phil. Mag. A 81, 2073-94 (2001).
38. P.C. McIntyre, “Point Defect Equilibrium in Strontium
Titanate Thin Films,” J. Appl. Phys. 89, 8074-84 (2001).
37. P.C. McIntyre, J.H. Ahn, R.J. Becker, R.V. Wang,
S.R. Gilbert, L.W. Mirkarimi, M.T. Schulberg, “Deuterium in (Ba,Sr)TiO3
Thin Films: Kinetics and Mechanisms of Incorporation and Removal During
Annealing,” J. Appl. Phys. 89, 6378-88 (2001).
36. C.M. Perkins,
B.B. Triplett, P.C. McIntyre, K.C. Saraswat, S. Haukka, and M. Tuominen,
“Electrical and Materials Properties of ZrO2 Gate Dielectrics Grown
by Atomic Layer Chemical Vapor Deposition,” Appl.
Phys. Lett. 78, 2357-59 (2001).
35. M.C. Werner, I. Banerjee, R. Zhang, P.C. McIntyre, N. Tani,
and M. Tanimura, “Dielectric Relaxation and Steady-State Leakage in
Low-Temperature Sputtered (Ba, Sr)TiO3 Thin Films,” J. Appl. Phys. 89, 2309-13 (2000).
34. J.H. Ahn, P.C. McIntyre, L.W. Mirkarimi, S.R. Gilbert, J.
Amano, and M. Schulberg, “Deuterium-Induced Degradation of (Ba,Sr)TiO3 Thin
Films,” Appl. Phys. Lett. 77, 1378-80 (2000).
33. M.C. Werner, I. Banerjee, P.C. McIntyre, N. Tani, and M.
Tanimura, “Microstructure of (Ba,Sr)TiO3 Thin Films Deposited by Physical Vapor
Deposition at 480°C and Its Influence on the Dielectric Properties,” Appl. Phys. Lett. 77, 1209-11 (2000).
32. P.C. McIntyre, “Equilibrium Point Defect and Electronic
Carrier Distributions Near Interfaces in Acceptor-Doped Strontium Titanate,” J. Am. Ceram. Soc. 83, 1129-36 (2000).
31. T.M. Shaw, S. Trolier-McKinstry, and P.C. McIntyre,
“Properties of Ferroelectric Films at Small Dimensions,” Ann. Rev. Mater. Sci. 30,
263-98 (2000).
30. P.C. McIntyre, C.J. Maggiore, and M. Nastasi,
“Interpretation of Ion Channeling Results from Epitaxial Pt Thin Films and
Co/Pt Multilayers,” Nucl. Instruments
Meth. B 136-138, 214-19 (1998).
29. P.C. McIntyre and S.R. Summerfelt, “Kinetics and Mechanisms
of TiN Oxidation Beneath Pt Thin Films,” J.
Appl. Phys. 82, 4577-85 (1997).
28. P.C. McIntyre, S.R. Summerfelt, and C.J. Maggiore,
“Oxidation Kinetics of TiN Layers: Exposed and Beneath Pt Thin Films,” Appl. Phys. Lett. 70, 711-13 (1997).
27. P.C. McIntyre, C.J. Maggiore, and M. Nastasi, “Epitaxy of Pt
Thin Films on (001) MgO. II. Orientation Evolution from Nucleation through
Coalescence,” Acta Mater. 45, 879-87
(1997).
26. P.C. McIntyre, C.J. Maggiore, and M. Nastasi, “Epitaxy of
Pt Thin Films on (001) MgO. I. Interface Energetics and Misfit Accommodation,” Acta Mater. 45, 869-78 (1997).
25. P.C. McIntyre, D.T. Wu, and M. Nastasi, “Interdiffusion in
Epitaxial Co/Pt Multilayers,” J. Appl.
Phys. 81, 637-45 (1997).
24. K.C. Walter, J.T. Scheuer, P.C. McIntyre, P. Kodali, N. Yu,
and M. Nastasi, “Increased Wear Resistance of Electrodeposited Chromium through
Applications of Plasma Source Ion Implantation Techniques,” Surf. Coatings Technol. 85, 1-6 (1996).
23. N. Yu, P.C. McIntyre, T.E. Levine, E.P. Giannelis, J.W.
Mayer, and M. Nastasi, “Ion-beam-induced epitaxial crystallization of sol-gel
zirconia thin films on yttria-stabilized zirconia,” Phil. Mag. Lett. 73,
359-68 (1996).
22. J.M. McHale, P.C. McIntyre, K.E. Sickafus, and N.V. Coppa,
“Nanocrystalline BaTiO3 from Freeze-Dried Nitrate Solutions,” J. Mater. Res. 11, 1199-209 (1996).
21. P.C. McIntyre, K.G. Ressler, N. Sonnenberg, and M.J. Cima,
“Transmission Electron Microscopy Investigation of Biaxial Alignment
Development in YSZ Films Fabricated Using Ion Beam Assisted Deposition,” J. Vac. Sci. Technol. A 14,
210-15 (1996).
20. N. Yu, P.C. McIntyre, M. Nastasi, and K.E. Sickafus,
“High-Quality Epitaxial Growth of Gamma-Alumina films on Alpha-Alumina Sapphire
Induced by Ion-Beam Bombardment,” Phys.
Rev. B 52, 17518-22 (1995).
19. N. Yu, Q.Z. Wen, D.R. Clarke, P.C. McIntyre, H. Kung, M.
Nastasi, T.W. Simpson, I.V. Mitchell, and D.Q. Li, “Formation of Iron or
Chromium Doped Epitaxial Sapphire Thin Films on Sapphire Substrates,” J. Appl. Phys. 78, 5412-21 (1995).
18. K. Nashimoto, M.J. Cima, P.C. McIntyre, and W.E. Rhine,
“Microstructure Development of Sol-Gel Derived Epitaxial LiNbO3 Thin
Films,” J. Mater. Res. 10, 2564-72 (1995).
17. N. Yu, T.W. Simpson, P.C. McIntyre, M. Nastasi, and I.V.
Mitchell, “Doping Effects on the Kinetics of Solid-Phase Epitaxial-Growth of
Amorphous Alumina Thin-Films on Sapphire,” Appl.
Phys. Lett. 67, 924-26 (1995).
16. P.C. McIntyre, C.J. Maggiore, and M. Nastasi, “Orientation
Selection in Thin Platinum Films on (100) MgO,” J. Appl. Phys. 77,
6201-4 (1995).
15. P.C. McIntyre, B.P. Chang, N. Sonnenberg, and M.J. Cima,
“Defect Formation in Epitaxial Oxide Dielectric Layers Due to Substrate Surface
Relief,” J. Electron. Mater. 24, 735-45 (1995).
14. P.C. McIntyre, M.J. Cima, and A. Roshko, “Epitaxial
Nucleation and Growth of Chemically Derived Ba2YCu3O7-x
Thin Films on (001) SrTiO3,” J.
Appl. Phys. 77, 5263-72 (1995).
13. D.H. Liebenberg, R.J. Soulen, T.L. Francavilla, W.W.
Fullermora, P.C. McIntyre, and M.J. Cima, “Current-Voltage Measurements of Thin
YBa2Cu3O6.9 Films Compared with a Modified
Ambegaokar-Halperin Theory,” Phys. Rev.
B 51, 11838-47 (1995).
12. P.C. McIntyre, M.J. Cima, and A. Roshko, “Effects of
Substrate Surface Steps on the Microstructure of Epitaxial Ba2YCu3O7-x
Thin Films on (001) LaAlO3,” J.
Crystal Growth 149, 64-73
(1995).
11. D.H. Liebenberg, P.C. McIntyre, M.J. Cima, and T.L.
Francavilla, “Critical Current Angle-Dependent Measurements of Thin (15 nm)
Chemically-Derived YBa2Cu3O7-d Films in Fields
to 5.5 T,” Physica C 235-240,
3069-70 (2004).
10. P.C. McIntyre and M.J. Cima, “Microstructural
Inhomogeneities in Chemically Derived Ba2YCu3O7-x
Thin Films: Implications for Flux Pinning,” J.
Mater. Res. 9, 2778-88 (1994).
9. P.C. McIntyre and M.J. Cima, “Heteroepitaxial Growth of
Chemically Derived Ex Situ Ba2YCu3O7-x
Thin Films,” J. Mater. Res. 9, 2219-30 (1994).
8. D.H. Liebenberg, M.J. Cima, P.C. McIntyre and T.L.
Francavilla, “Angular Dependence of Transport Current Near Critical at Fields
to 4 T in Metalorganic Thin Films,” J.
Superconductivity 7, 303-8
(1994).
7. A.C. Westerheim, P.C. McIntyre, S.N. Basu, D. Bhatt, L.S.
Yu-Jahnes, A.C. Anderson, and M.J. Cima, “Comparison of the Surface Morphology
and Microstructure of In Situ and Ex Situ Derived YBa2Cu3O7-x
Thin Films,” J. Electron Mater. 22, 1113-20 (1993).
6. N. Sonnenberg, A.S. Longo, M.J. Cima, B.P. Chang, K.G.
Ressler, P.C. McIntyre, and Y.P. Liu, “Preparation of Biaxially Aligned Cubic
Zirconia Films on Pyrex Glass Substrates Using Ion-Beam Assisted Deposition,” J. Appl. Phys. 74, 1027-34 (1993).
5. P.C. McIntyre, M.J. Cima, J.A. Smith, R.B. Hallock, M.P.
Siegal, and J.M. Phillips, “Effect of growth conditions on the properties and
morphology of chemically derived epitaxial thin films of Ba2YCu3O7-x
on (001) LaAlO3,” J. Appl.
Phys. 71, 1868-77 (1992).
4. D.H. Liebenberg, P.C. McIntyre, M.J. Cima, and T.L.
Francavilla, “Angular Dependence of Critical Currents of High Temperature
Superconducting Films in High Magnetic Fields Prepared by Metalorganic
Deposition,” Cryogenics 32, 1066-70 (1992).
3. P.C. McIntyre, M.J. Cima, D.H. Liebenberg, and T.L.
Francavilla, “Mixed-State Behavior in Large Magnetic Fields of High-Temperature
Superconducting Films Prepared by Metalorganic Deposition,” Appl. Phys. Lett. 58, 2033-35 (1991).
2. P.C. McIntyre, M.J. Cima, M.F. Ng, R.C. Chiu, and W.E.
Rhine, “Texture development in Ba2YCu3O7-x
Films from Trifluoroacetate Precursors,” J.
Mater. Res. 5, 2771-79 (1990).
1. P.C. McIntyre, M.J. Cima and M.F. Ng, “Metalorganic
Deposition of High-Jc Ba2YCu3O7-x
Thin-Films from Trifluoracetate Precursors onto (100) SrTiO3,” J. Appl. Phys. 68, 4183-87 (1990).
Refereed Conference/Symposia
Proceedings (McIntyre
Ph.D. advisees in bold)
30. S. Swaminathan and P.C. McIntyre,
“In Situ XPS in Atomic Layer Deposition of Oxides on Ge (100),” ECS Trans. 33
[6] 455-62 (2010).
29. P.C.
McIntyre, H. Adhikari, I.A.
Goldthorpe, A.F. Marshall, C.E.D. Chidsey, “Group IV semiconductor nanowire
arrays: Different flavors of epitaxy,” Proc.
of SPIE 7406, 740601 (2009).
28. D. Kuzum, A. Pethe, T. Krishnamohan, Y. Oshima, Y. Sun,
J.P. McVittie, P.A. Pianetta, P.C. McIntyre, and K.C. Saraswat, “Interface-Engineered Ge (100) and
(111), N- and P-FETs with High Mobility,” IEEE International Electron Devices
Meeting Technical Digest, 723-26 (2007).
27. P.C. McIntyre, “Bulk and Interfacial Oxygen Defects in HfO2
Gate Dielectric Stacks: A Critical Assessment,” ECS Trans. 11 [4], 235-49 (2007).
26. J. Ha, H.
AlShareef, J. Chambers, Y. Sun, P. Pianetta, P. McIntyre, and L. Colombo,
“Oxygen Transfer from Metal Gate to High-k Gate Dielectric Stack: Interface
Structure & Property Changes,” ECS Trans. 11 [4], 213-18 (2007).
25. R. Chen, D.W. Porter, H.
Kim, P.C. McIntyre, and S.F. Bent, “Area Selective Atomic Layer Deposition
by Soft Lithography,” Mater. Res. Soc. Symp. Proc. 917, 161-166 (2006).
24. T.Sugawara, R.
Sreenivasan, and P.C. McIntyre,
“Effects of Nitrogen Reactive Species on Germanium Plasma Nitridation
Processes,” Mater. Res. Soc. Symp. Proc. 917,
1-7 (2006).
23. A.K. Okyay, A.M. Nayfeh, K.C Saraswat, N. Ozguven, A. Marshall, P.C. McIntyre, and T. Yonehara, “Strain
Enhanced High Efficiency Germanium Photodetectors in the Near Infrared for
Integration with Si,” Proceedings of IEEE LEOS Annual Meeting, Montreal,
Canada, 29 Oct. to 2 Nov., 2006, 2 (2006).
22. N. Kamehara, K. Kurihara, J.D. Baniecki, T. Shioga, K.
Nomura, and P.C. McIntyre, “High Performance Barium Strontium Titanate Thin
Film Capacitors for Decoupling Applications,” Ceram. Trans. 174, 251-57 (2006).
21. P.C. McIntyre, D.
Chi, C.O. Chui, H. Kim, K.I. Seo, K.C. Saraswat, R. Sreenivasan, T. Sugawara, F.S.
Aguirre-Testado, and R.M. Wallace, “Interface
Layers for High-k/Ge Gate Stacks: Are They Necessary?” ECS Trans. 3, 519-530 (2006).
20. P.C. McIntyre, H.
Kim, and K.C. Saraswat, “Structural Evolution and Point Defects in Metal
Oxide-Based High-k Gate Dielectrics,”
in Defects in High-k Dielectrics (Springer, 2006), 109-120.
19. R.-V. Wang, P.C. McIntyre, J.D.
Baniecki, K. Nomura, S. Takeshi, and K. Kurihara, “Y-Doping Effects on the
Dielectric Behavior of RF-Sputtered BST Thin Films,” Mater. Res. Soc. Symp.
Proc. 833, 29 (2005).
18. K.I. Seo, R. Sreenivasan, P.C. McIntyre, and K.C.
Saraswat, “Improvement in High-k (HfO2/SiO2) Reliability
by Incorporation of Fluorine,” IEEE International Electron Devices Meeting
Technical Digest, 619-22 (2005).
17. K.
Uchida, R. Zednik, C.-H. Lu, H.
Jagannathan, J. McVittie, P.C. McIntyre, and Y. Nishi, “Experimental Study of
Biaxial and Uniaxial Strain Effects on Carrier Mobility in Bulk and
Ultrathin-Body SOI MOSFETs,” IEEE International Electron Devices Meeting
Technical Digest, 229 (2004).
16. R. Chen, H. Kim,
P.C. McIntyre, and S.F. Bent, “Controlling Area-Selective Atomic Layer
Deposition of HfO2 Dielectric by Self-Assembled Monolayers,” Mater.
Res. Soc. Symp. Proc. 811, 57-62
(2004).
15. D.B. Aubertine and P.C. McIntyre, “Interdiffusion in Coherent Si0.70Ge0.30/Si0.95Ge0.05
Superlattices,” Mater. Res. Soc. Symp. Proc. 795,
247-52 (2003).
14. C.O. Chui, H. Kim,
J.P. McVittie, B.B Triplett, P.C. McIntyre, and K.C. Saraswat, “A Novel
Self-Aligned Gate-Last MOSFET Process Comparing High-k Candidates,” 2003
International Semiconductor Device Research Symposium Extended Abstracts,
464-65 (2003).
13. C.O. Chui, H. Kim,
P.C. McIntyre, and K.C. Saraswat, “A Germanium NMOSFET Process Integrating
Metal Gate and Improved Hi-k Dielectrics,” IEEE International Electron Devices Meeting
Technical Digest 18.3.1-4 (2003).
12. J.R. Jameson, P.B. Griffin, A. Agah, J.D. Plummer, H.S. Kim, D.V. Taylor, P.C. McIntyre,
W.A. Harrison, IEEE International Electron Devices Meeting Technology Digest,
4.3.1-4 (2003).
11. C.O. Chui, H. Kim,
D. Chi, B.B. Triplett, P.C.
McIntyre, and K.C. Saraswat, “Ultrathin High-k Gate Dielectric Technology
for Germanium MOS Applications,” 2002 Device Research Conference Extended
Abstracts, 191-2 (2002).
10. S. Ramanathan
and P.C. McIntyre, “Room Temperature Grown Zirconia/SiO2 Dielectric
Stacks with 1 nm EOT,” 2002 Device Research Conference Extended Abstracts,
101-2 (2002).
9. J. Guo, S. Datta, M. Lundstrom, M. Brink, P. McEuen, A.
Javey, H.J. Dai, H. Kim, P.
McIntyre, “Assessment of Silicon MOS and Carbon Nanotube FET Performance Limits
Using a General Theory of Ballistic Transistors,” International Electron
Devices Meeting Technical Digest, 711-14 (2002).
8. T-S. Chen, D. Hadad, V. Balu, B. Jiang, S-H. Kuah, P.C.
McIntyre, S.R. Summerfelt, M.J. Anthony, and J.C. Lee, “Ir-Electroded BST Thin
Film Capacitors for 1 Giga-Bit DRAM Application,” International Electron
Devices Meeting Technical Digest, 679-682 (1996).
7. P.C. McIntyre, C.J. Maggiore, and M. Nastasi,
“Orientation Selection and Microstructural Evolution of Epitaxial Pt Films on
(001) MgO,” Mater. Res. Soc. Symp. Proc. 355,
335-40 (1995).
6. T.W. Simpson, I.V. Mitchell, N. Yu, M. Nastasi, and P.C.
McIntyre, “Crystallization Kinetics of Fe-Doped Al2O3,”
Mater. Res. Soc. Symp. Proc. 357,
201-05 (1995).
5. N. Sonnenberg, K.G. Ressler, P.C. McIntyre, and M.J.
Cima, “The Influence of Processing Parameters on the Development of Biaxially
Aligned Zirconia Thin Films Deposited by Ion Beam Assisted Deposition,” Mater.
Res. Soc. Symp. Proc. 341, 163-68
(1995).
4. B.P. Chang, P.C. McIntyre, N. Sonnenberg, and M.J. Cima,
“Epitaxial Dielectric Planarization for Multilayer HTSC Structures,” Mater.
Res. Soc. Symp. Proc. 341, 151-56
(1995).
3. B.P. Chang, N. Sonnenberg, P.C. McIntyre, M.J. Cima, J.
Sun, and L.S. Yu-Jahnes, “Epitaxial Planarization Using Ion Beam Assisted
Deposition,” Mater. Res. Soc. Symp. Proc. 316,
887-92 (1994).
2. P.C. McIntyre and M.J. Cima, “Microstructural Evolution
During Epitaxial Growth of Chemically Derived Ba2YCu3O7-x
Thin Films,” Mater. Res. Soc. Symp. Proc. 280,
371-74 (1993).
1. M.J. Cima, P.C. McIntyre, J.A. Smith, Jr., B.P. Chang,
and R.B. Hallock, “Metalorganic Deposition of High-Jc Ba2YCu3O7-x
Thin Films on Single Crystal Substrates,” Proc. XII Winter Meeting Low
Temperature Physics, Superconducting Ceramics, 13-23 (1991).
