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Current Research

K. Eason- - Effect of alternate front-end-of-line cleaning processes on the gate oxide integrity as measured by device electrical proformance.

F. Machuca-Current research consists of Thin Film Transistor work in a collaboration with Prof. Saraswat. Present work also extends into a new surface passivation scheme for MOS devices. This effort replaces hydrogen termination with a methoxy termination by introducing a new chemical clean pre-thermal oxidation. The hopes are to find a more robust surface termination. This work will also consider the effects of metal impurities (Cu and Al) and alkalines (Na+ and K-) on oxidation of the new silicon surface treatment.

M. Perkins- Interface Morphology Issues in Silicon/Silicon Oxide, Nitride ULSI Structures