Synthesis.
We developed
a very low temperature (down to 270C) CVD synthesis for single
crystal Ge nanowires [Wang, Angew. Chemie, 2002]. In a recently
submitted work, we achieved patterning of single Au particle arrays
for 1-1 growth of nanowires. That is, each particle produces a
nanowire [Wang, Angew. Chemie, 2005].
Nanoelectronics.
We demonstrate Ge nanowire FETs with high k dielectrics [Appl. Phys. Lett, 2003]
Surface chemistry, passivation and assembly.
We investigated the surface chemistry of GeNWs and uncovered different surface
reactivity phenomena for p- and n-type Ge [Wang, JACS, 2004].
Single-Crystalline GeNW Synthesis by CVD At ~300C
Patterning of individual Au nanoparticles for one-to-one nanowire synthesis
