*--------------------------TOSHIBA RF BJT---------------------------

.subckt XQN414 c1 b1 e1

Lb	b1	b	0.858n
Lc	c1	c	1.5n
Le	e1	e	750p
Cpkg_be	b	e	0.35p
Cpkg_ce	c	e	0.35p
Q1	c	b	e	QN414

.Model  QN414  NPN (
+bf=80
+vaf=50
+ise=2e-14
+ne=1.55
+nf=0.9953
+tf=30p
+rb=23
+cje=1.3p
+mje=0.33
+cjc=1p
+mjc=0.33 	
+ikf=400m
+nkf=0.6)

.ends


*----------------------2.77mm-wide microstrip-----------------------
* U1	in	0	out	0	MICRO	l=2e-2

.model micro u 
+level=3
+elev=1
+plev=1
+dlev=1
+d12=1
+nl=1
+ht=1.59e-3
+wd=2.77e-3
+th=5.08e-5
+kd=4.8

*-------------------------Varactor diode---------------------------

.subckt varactor anode cathode

Cvar	10	cathode	poly	23.3836e-12	5.1258e-12	0.5214e-12
+0.0240e-12	0.0004e-12
Rs_CVar	10	20	1.1
Ls_Cvar 20	anode	2n

.ends


* To use Transistor you can use
* 
* Xnmos   C1	B1	E1	XQN414
* 
* To use Varactor type
* 
* XVaractor	Gnd	C1	varactor