We are at a nascent stage of non-volatile memories (NVM) creating significant changes to the memory heirarchy of compute platforms. The talk will cover NVM in the form of NAND memory, from basic operation and reliability physics; system implemtation of NAND into solid state disks and caches and their impact upon computing. Future memory devices and architectures will also be discussed.
Slides:
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About the speaker:
Al Fazio is an Intel Fellow and Director of Memory Technology Development in the Technology and Manufacturing Group. In his current position, he is responsible for exploring and developing flash memory and multi-level cell memory technologies as well as novel memory technology ideas. Since joining Intel in 1982, Fazio has been involved in various engineering roles in memory development programs including SRAM, EPROM, E2PROM, NVRAM and Flash Memories. His technical contributions and leadership have helped pioneer new capabilities in the area of Flash, Strata-Flash, and Flash and logic combinations, providing cost and functionality advantages to Intel products.
Contact information:
Al Fazio
Intel Corporation
2200 MIssion College Blvd.
Santa Clara, CA
408-765-9610
al.fazio@intel.com