| EE 316 / Winter 02 |
EE 316
ADVANCED VLSI DEVICES
| Instructor | Professor Krishna Saraswat;
CISX 326; 725-3610; Saraswat@stanford.edu
Office Hours: Monday, Wednesday 4-5 pm; |
| Secretary | Irene Sweeney; CIS 327; 725-3611; Sweeney@cis |
| TA | Pranav Kalavade;
kalavade@stanford.edu
Office Hours: M,W 5-6pm Location: CIS-201; (650)725-9341 |
| Lecture | Tuesday, Thursday : 3:15-4:30 PM; Skilling 193 |
| Text | None, lecture notes and journal papers will be distributed |
| Prereq. | EE216 or equivalent required, EE212 highly recommended |
| References | Muller & Kamins, "Device Electronics
for Integrated Circuits," 2nd Edition, Wiley
Nicollian & Brews, "MOS (Metal Oxide Semiconductor) Physics and Technology," Wiley Sze, "Physics of Semiconductor Devices," 2nd Edition, Wiley Sze, "High Speed Semiconductor Devices," Wiley Roulston, "Bipolar Semiconductor Devices," McGraw Hill Dutton & Yu, "Technology CAD - Computer Simulation of IC Processes and Devices," Kluwer Chang & Sze, "ULSI Technology," McGraw Hill |
| Credit | 3 units; Letter grade only |
| Grading | Homework* 20%
Examination (Date to be announced) 40% Device Design Project* (due 3/11/02) 40% |