1. Introduction

– course objectives

– overview of VLSI device trends

2. MOS Capacitors

– band diagrams

– C-V characteristics

– oxide charges and traps

- measurement techniques

3. Scaled MOS Field Effect Transistors

– scaling of MOSFET

– low field characteristics

- high field characteristics

- hot electron effects and reliability

- deep submicron device design and structures

– selected current topics (EPROM, EEPROM, SOI, Double Gate, Molecular Transistor)

4. Scaled Bipolar Junction Transistors

– scaling of BJT

– low level injection characteristics

- high level injection characteristics

- high frequency characteristics

- high speed device design and structures

– selected current topics (Si/Ge heterojunction BJT)

5. Other Device Structures

– as time permits

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